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igbt igbtwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD04N60RFA trenchstop tm rc-seriesforhardswitchingapplicationsupto30khz datasheet industrialpowercontrol
2 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 igbtwithintegrateddiodeinpackagesofferingspacesavingadvantage features: trenchstop tm reverseconducting(rc)technologyfor600v applicationsoffering ?optimizedeon,eoffandqrrforlowswitchinglosses ?operatingrangeof4to30khz ?smoothswitchingperformanceleadingtolowemilevels ?verytightparameterdistribution ?maximumjunctiontemperature175c ?shortcircuitcapabilityof5s ?bestinclasscurrentversuspackagesizeperformance ?qualifiedaccordingtoaec-q101 ?pb-freeleadplating;rohscompliant(soldertemperature 260c,msl1) completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?smalldrives ?piezoinjection ?automotivelighting/hid keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKD04N60RFA 600v 4a 2.2v 175c k04drfa pg-to252-3 g c e g e c
3 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 g c e g e c
4 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 600 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 8.0 4.0 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 12.0 a turn off safe operating area v ce 600v, t vj 175c, t p =1s 1) - 12.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 8.0 4.0 a diodepulsedcurrent, t p limitedby t vjmax 1) i fpuls 12.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s powerdissipation t c =25c p tot 75.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, reflow soldering (msl1 according to jedec j-sta-020) 260 c thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, 2) junction - case r th(j-c) 2.00 k/w diode thermal resistance, 3) junction - case r th(j-c) 4.50 k/w thermal resistance, min. footprint junction - ambient r th(j-a) 75 k/w thermal resistance, 6cm2 cu on pcb junction - ambient r th(j-a) 50 k/w 1) defined by design. not subject to production test. 2) rth/zth based on single cooling pulse. please be aware that a correct rth measurement of the igbt, is not possible using a thermocouple. 3) rth/zth based on single cooling pulse. please be aware that a correct rth measurement of the diode, is not possible using a thermocouple. g c e g e c
5 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =4.0a t vj =25c t vj =175c - - 2.20 2.30 2.50 - v diode forward voltage v f v ge =0v, i f =4.0a t vj =25c t vj =175c - - 2.10 2.00 2.40 - v gate-emitter threshold voltage v ge(th) i c =0.07ma, v ce = v ge 4.3 5.0 5.7 v zero gate voltage collector current i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - 180.0 40.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance 1) g fs v ce =10v, i c =4.0a - 1.9 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 305 - output capacitance c oes - 18 - reverse transfer capacitance c res - 9 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =4.0a, v ge =15v - 27.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =25c - 32 - a 1) typicalvalueoftransconductancedeterminedat t vj =175c. g c e g e c
6 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 12 - ns rise time t r - 7 - ns turn-off delay time t d(off) - 116 - ns fall time t f - 37 - ns turn-on energy e on - 0.06 - mj turn-off energy e off - 0.05 - mj total switching energy e ts - 0.11 - mj t vj =25c, v cc =400v, i c =4.0a, v ge =0.0/15.0v, r g(on) =43.0 w , r g(off) =43.0 w , l s =60nh, c s =40pf l s , c s fromfig.e diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 34 - ns diode reverse recovery charge q rr - 0.09 - c diode peak reverse recovery current i rrm - 4.6 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -220 - a/s t vj =25c, v r =400v, i f =4.0a, di f /dt =600a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 11 - ns rise time t r - 7 - ns turn-off delay time t d(off) - 128 - ns fall time t f - 88 - ns turn-on energy e on - 0.11 - mj turn-off energy e off - 0.08 - mj total switching energy e ts - 0.19 - mj t vj =175c, v cc =400v, i c =4.0a, v ge =0.0/15.0v, r g(on) =43.0 w , r g(off) =43.0 w , l s =60nh, c s =40pf l s , c s fromfig.e diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 82 - ns diode reverse recovery charge q rr - 0.26 - c diode peak reverse recovery current i rrm - 7.2 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -100 - a/s t vj =175c, v r =400v, i f =4.0a, di f /dt =600a/s g c e g e c
7 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 figure 1. collectorcurrentasafunctionofswitching frequency ( t vj 175c, t a =55c, d =0.5, v ce =400v, v ge =15/0v, r g =43 w ,pcbmounting,6cm2 cu, ptot=2,4w) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 not for linear use figure 3. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 8 g c e g e c
8 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 figure 5. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 2 4 6 8 10 12 v ge = 20v 17v 15v 13v 11v 9v 7v figure 6. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 2 4 6 8 10 12 v ge = 20v 17v 15v 13v 11v 9v 7v figure 7. typicaltransfercharacteristic ( v ce =10v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 6 8 10 12 14 0 2 4 6 8 10 12 t j = 25c t j = 175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i c = 1a i c = 2a i c = 4a i c = 8a g c e g e c
9 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, r g =43 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, i c =4a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 10 20 30 40 50 60 70 80 1 10 100 1000 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =4a, r g =43 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0,07ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 1 2 3 4 5 6 7 typ. min. max. g c e g e c
10 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, r g =43 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.00 0.05 0.10 0.15 0.20 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, i c =4a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 10 20 30 40 50 60 70 80 0.0 0.1 0.2 0.3 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =4a, r g =43 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.00 0.05 0.10 0.15 0.20 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =15/0v, i c =4a, r g =43 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 300 350 400 450 500 0.00 0.05 0.10 0.15 0.20 0.25 e off e on e ts g c e g e c
11 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 figure 17. typicalgatecharge ( i c =4a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 v cc =120v v cc =480v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t vj =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 12 14 16 18 20 0 10 20 30 40 50 60 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t vj =150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 16 17 18 19 0 2 4 6 8 10 12 g c e g e c
12 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 figure 21. igbttransientthermalimpedanceasa functionofpulsewidth(seepage4 2) ) ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.492466 2.0e-4 2 0.884411 5.4e-4 3 0.589157 2.1e-3 4 0.073673 0.031658 figure 22. diodetransientthermalimpedanceasa functionofpulsewidth(seepage4 3) ) ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 1.251705 1.4e-4 2 1.749937 1.5e-4 3 1.260868 9.4e-4 4 0.252056 7.1e-3 figure 23. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 400 600 800 1000 1200 0 20 40 60 80 100 t j = 25c, i f = 4a t j = 175c, i f = 4a figure 24. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 400 600 800 1000 1200 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 t j = 25c, i f = 4a t j = 175c, i f = 4a g c e g e c
13 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 figure 25. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 400 600 800 1000 1200 4 6 8 10 12 14 t j = 25c, i f = 4a t j = 175c, i f = 4a figure 26. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 400 600 800 1000 1200 -500 -400 -300 -200 -100 0 t j = 25c, i f = 4a t j = 175c, i f = 4a figure 27. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 3 4 0 2 4 6 8 10 12 t j = 25c, v ge = 0v t j = 175c, v ge = 0v figure 28. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 i f = 1a i f = 2a i f = 4a i f = 8a g c e g e c
14 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 g c e g e c p g - t o 2 5 2 - 3
15 IKD04N60RFA trenchstop tm rc-drivesfastseries rev.2.1,2014-12-15 g c e g e c p g - t o 2 5 2 - 3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce
16 IKD04N60RFA trenchstop tm rc-drives fast series rev. 2.1, 2014-12-15 revision history IKD04N60RFA previous revision revision date subjects (major changes since last revision) 2.1 2014-12-15 final data sheet g c e g e c p g - t o 2 5 2 - 3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce

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